Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7602, Issue , 2010, Pages

  Muller J ^a   Bruderl G ^a   Schillgalies, M ^a   Breidenassel, A ^a   Tautz, S ^a   Dini, D ^a   Lermer, T ^a   Lutgen, S ^a   Strauss U ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; InGaN laser

Indexed keywords

ANALYTICAL METHOD; BEFORE AND AFTER; CARRIER DENSITY; CONSTANT CURRENT; CONSTANT CURRENT DENSITY; CURRENT SPREADING; INGAN LASER; INGAN LASER DIODES; LONG-TERM STRESS; LOSS MECHANISMS; NON-RADIATIVE RECOMBINATIONS; OPTICAL OUTPUT; OUTPUT POWER; PHYSICAL MECHANISM; RECOMBINATION MODEL; RIDGE LASER; SUBTHRESHOLD; THRESHOLD CURRENTS;

DEGRADATION; GALLIUM ALLOYS; LITHIUM BATTERIES;

GALLIUM NITRIDE;

EID: 77951734229     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842130     Document Type: Conference Paper

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