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Volumn 203, Issue 7, 2006, Pages 1778-1782
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Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
a b b a a a a,c a a,c a a c a,c
c
TOPGAN LTD
(Poland)
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECT DIFFUSION;
DISLOCATION DENSITY;
MONOCRYSTALINE SUBSTRATES;
SQUARE ROOT DEPENDENCE;
CRYSTAL GROWTH;
DEGRADATION;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
SEMICONDUCTOR LASERS;
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EID: 33745011893
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200565316 Document Type: Article |
Times cited : (5)
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References (11)
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