Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7603, Issue , 2010, Pages

  Ougazzaden, A ^a   Rogers, D J ^b   Teherani, F Hosseini ^b   Orsal, G ^c   Moudakir, T ^c   Gautier, S ^c   Sandana, V E ^b   Jomard, F ^d   Abid, M ^a   Molinari, M ^e   Troyon, M ^e   Voss, P L ^a   McGrouther, D ^f   Chapman, J N ^f  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^b 8 Route de Chevreuse France   (France)

^c SUPELEC   (France)

^d LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

^e UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^f UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

InGaN; Lift off; Metalorganic vapour phase epitaxy; Pulsed laser deposition; Si substrate; ZnO

Indexed keywords

ATOMIC NITROGEN; BACK ETCHING; CARRIER GAS; CONCENTRATION OF; DIMETHYLHYDRAZINE; HIGH-RESOLUTION X-RAY DIFFRACTION; INGAN/GAN; LOW TEMPERATURES; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; MOVPE GROWTH; SECONDARY ION MASS SPECTROSCOPY; SI SUBSTRATE; SI SUBSTRATES; SI(111) SUBSTRATE; SINGLE PHASE; WURTZITES; XRD; ZNO;

CARRIER CONCENTRATION; CRYSTAL GROWTH; DISSOLUTION; EPITAXIAL FILMS; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; NITRIC ACID; PULSED LASER DEPOSITION; PULSED LASERS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

SUBSTRATES;

EID: 77951713776     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846664     Document Type: Conference Paper

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