Reduction of RTS noise in small-area MOSFETs under switched bias conditions and forward substrate bias

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1119-1128

  Zanolla, Nicola ^a,b   Šiprak, Domagoj ^b,c   Tiebout, Marc ^d   Baumgartner, Peter ^b   Sangiorgi, Enrico ^a   Fiegna, Claudio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^d INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

Low frequency noise (LFN); Metal oxide semiconductor field effect transistor (MOSFET); Random telegraph signal (RTS) noise; Substrate bias; Switched bias noise

Indexed keywords

LOW-FREQUENCY NOISE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; RANDOM TELEGRAPH SIGNAL NOISE; SUBSTRATE BIAS; SWITCHED BIAS;

ACOUSTIC VARIABLES CONTROL; ANALOG CIRCUITS; DIELECTRIC DEVICES; DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); SUBSTRATES; TELEGRAPH; THERMAL NOISE;

MOSFET DEVICES;

EID: 77951623133     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2043554     Document Type: Article

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