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Volumn 6275, Issue , 2006, Pages

Progress on GaAs cryogenic readout circuits for SISCAM

Author keywords

ASTE; Cryogenic readout circuits; GaAs JFET; Imaging array; SISCAM; STJ; Submillimeter

Indexed keywords

ASTE; CRYOGENIC READOUT CIRCUITS; GAAS JFET; IMAGING ARRAY; SISCAM;

EID: 33749640351     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.670966     Document Type: Conference Paper
Times cited : (19)

References (8)
  • 1
    • 21244502134 scopus 로고    scopus 로고
    • Superconducting detectors and mixers for millimeter and submillimeter astrophysics
    • J. Zmuidzinas and P. L. Richards, "Superconducting Detectors and Mixers for Millimeter and Submillimeter Astrophysics," Proc. of IEEE, vol. 92, pp. 1597-1616
    • Proc. of IEEE , vol.92 , pp. 1597-1616
    • Zmuidzinas, J.1    Richards, P.L.2
  • 5
    • 33749611576 scopus 로고    scopus 로고
    • Development of Superconductive Imaging Submillimeter-wave CAMera with nine detector elements (SISCAM-9)
    • in this volume
    • Y. Mori, T. Okaniwa, M. Nakahashi, S. Ariyoshi, C. Otani, H. Sato, H. Matsuo, "Development of Superconductive Imaging Submillimeter-wave CA Mera with nine detector elements (SISCAM-9)", Proc. of SPIE in this volume.
    • Proc. of SPIE
    • Mori, Y.1    Okaniwa, T.2    Nakahashi, M.3    Ariyoshi, S.4    Otani, C.5    Sato, H.6    Matsuo, H.7
  • 6
    • 33645849541 scopus 로고    scopus 로고
    • Cryogenic readout integrated circuits for submillimeter-wave camera
    • H. Nagata, J. Kobayashi, H. Matsuo, M. Akiba, M. Fujiwara, "Cryogenic readout integrated circuits for submillimeter-wave camera", NIMA, 559, pp.823-825, 2006
    • (2006) NIMA , vol.559 , pp. 823-825
    • Nagata, H.1    Kobayashi, J.2    Matsuo, H.3    Akiba, M.4    Fujiwara, M.5
  • 7
    • 79956016015 scopus 로고    scopus 로고
    • Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature
    • M. Fujiwara, M. Sasaki, and M. Akiba., "Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature", Appl. Phys. Lett., vol. 80, pp. 1844-1846, 2002
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1844-1846
    • Fujiwara, M.1    Sasaki, M.2    Akiba, M.3
  • 8
    • 84937744575 scopus 로고
    • Modeling and simulation of insulated-gate field-effect transistor switching circuits
    • H. Shichman, and D. A. Hodges "Modeling and simulation of insulated-gate field-effect transistor switching circuits", IEEE JSSC, vol. SC-3, no. 3, pp. 285-289, 1968.
    • (1968) IEEE JSSC , vol.SC-3 , Issue.3 , pp. 285-289
    • Shichman, H.1    Hodges, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.