On the frequency limits of SiGe HBTs for TeraHertz applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2007, Pages 22-25

  Jiahui, Yuan ^a   Krithivasan, Ram ^a   Cressler, John D ^a   Khater, Marwan H ^b   Ahlgren, David C ^c   Joseph, Alvin J ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE MEASUREMENT;

FREQUENCY LIMITS; NON EQUILIBRIUM EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 39049085706     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2007.4351830     Document Type: Conference Paper

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