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Volumn 9, Issue 1-3, 2006, Pages 36-40

Electrical activity of deep levels in the presence of InAs/GaAs quantum dots

Author keywords

Defects; DLTS; MBE; SIMS

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; OPTICAL WAVEGUIDES; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33744518057     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.004     Document Type: Article
Times cited : (7)

References (16)
  • 10
    • 33646834402 scopus 로고
    • Beleznay F., Ferenchi G., and Giber J. (Eds), Springer, Berlin
    • Mircea A., Pons D., and Makram-Ebeid S. In: Beleznay F., Ferenchi G., and Giber J. (Eds). Lecture notes in physics vol. 122 (1980), Springer, Berlin 69
    • (1980) Lecture notes in physics , vol.122 , pp. 69
    • Mircea, A.1    Pons, D.2    Makram-Ebeid, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.