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Volumn 9, Issue 1-3, 2006, Pages 36-40
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Electrical activity of deep levels in the presence of InAs/GaAs quantum dots
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Author keywords
Defects; DLTS; MBE; SIMS
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRON TRAPS;
OPTICAL WAVEGUIDES;
POINT DEFECTS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
ELECTRICAL ACTIVITY;
NON-HOMOGENOUS SPATIAL DISTRIBUTIONS;
OPTICAL AND ELECTRICAL CONFINEMENT;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 33744518057
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2006.01.004 Document Type: Article |
Times cited : (7)
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References (16)
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