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Volumn 28, Issue 8, 1999, Pages
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Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRON EMISSION;
HOLE TRAPS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
ELECTRON QUANTUM LEVEL;
SELF ASSEMBLED QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0033312005
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-999-0210-z Document Type: Article |
Times cited : (10)
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References (15)
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