Deep levels induced by InAs/GaAs quantum dots

Materials Science and Engineering C

Volumn 26, Issue 5-7, 2006, Pages 871-875

  Kaniewska, M ^a   Engstrom O ^b   Barcz, A ^a   Pacholak Cybulska, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Defects; DLTS; Quantum dots; SIMS

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE;

DEEP LEVEL-RELATED TRAP; ELECTRON TRAP; POINT DEFECT-OXYGEN COMPLEX; STRANSKI-KRASTANOV GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646826137     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.09.030     Document Type: Article

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