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Volumn 6, Issue , 2009, Pages
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Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate
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Author keywords
[No Author keywords available]
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Indexed keywords
DROPLET EPITAXY;
GAAS;
GAAS/ALGAAS;
GROWTH SUBSTRATES;
INTENSE EMISSION;
LOW TEMPERATURES;
OPTICAL EFFICIENCY;
PHOTOLUMINESCENCE MEASUREMENTS;
QUANTUM DOT;
SI/GE;
VIRTUAL SUBSTRATES;
CRYSTAL GROWTH;
DROP FORMATION;
FIELD EFFECT TRANSISTORS;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
GERMANIUM;
OPTICAL WAVEGUIDES;
OPTOELECTRONIC DEVICES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 77951578884
PISSN: 17578981
EISSN: 1757899X
Source Type: Conference Proceeding
DOI: 10.1088/1757-899X/6/1/012009 Document Type: Conference Paper |
Times cited : (6)
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References (18)
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