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Journal of Crystal Growth

Volumn 242, Issue 3-4, 2002, Pages 321-331

Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots

(6) Sanguinetti, Stefano a Watanabe, K a Kuroda, T a Minami, F a Gotoh, Y a Koguchi, N a

a INFM (Italy)

Author keywords

A1. Quantum dots; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

POST-GROWTH ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036645471 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01434-3 Document Type: Article

Times cited : (65)

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