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Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 125-130

Low temperature epitaxial growth by LEPECVD

(5) Rosenblad, C a Deller, H R a Graf, T a Muller E a Von Kanel H a

a ETH ZURICH (Switzerland)

Author keywords

CVD; Epitaxy; Plasma enhanced CVD; Silicon germanium

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; HYDROGEN; LOW TEMPERATURE PRODUCTION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SILANES; SUBSTRATES;

LOW ENERGY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (LEPECVD); SILICON GERMANIUM; STEP GRADED BUFFERS;

EPITAXIAL GROWTH;

EID: 0032097028 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00061-X Document Type: Article

Times cited : (19)

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