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Volumn , Issue , 2002, Pages 83-88
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"CV doping profiling of boron out-diffusion using an abrupt and highly doped arsenic buried epilayer"
a a a a a,b |
Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
BORON;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
DIFFUSION;
EPITAXIAL GROWTH;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
ARSENIC BURIED EPILAYER;
BORON OUT DIFFUSION;
TRANSIENT ENHANCED DIFFUSION EFFECTS;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 0037481718
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (8)
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