Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 143-144

  Sarubbi, F ^a   Nanver, L K ^a   Scholtes, T L M ^a   Nihtianov, S N ^a,b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849107202     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800775     Document Type: Conference Paper

References (2)

1. F. Sarubbi et al., ECS Transactions, vol. 3, no. 2, p. 35 (2006).
2. U.S. Patent Application P-2815.000-US, "Detector for 193 nm radiation," filed on 25 June 2007.