Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5377-5383

  Tseng, H C ^a   Pan, F M ^b   Chang, C Y ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544231994     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363479     Document Type: Article

References (15)

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