A comparative study on the structural properties and electrical characteristics of thin HoTixOy, TmTixO y and YbTixOy dielectrics

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Pan, Tung Ming ^a   Yen, Li Chen ^a   Wu, Xin Chang ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; CAPACITANCE-VOLTAGE CURVE; CHEMICAL FEATURES; COMPARATIVE STUDIES; CONSTANT VOLTAGE STRESS; ELECTRICAL CHARACTERISTIC; FILM-FORMING; FREQUENCY DISPERSION; GROWTH CONDITIONS; HYSTERESIS VOLTAGE; REACTIVE CO-SPUTTERING; SI(1 0 0); TIO; TRAPPED CHARGE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CAPACITANCE; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; SURFACE ROUGHNESS; SURFACE STRUCTURE; X RAY DIFFRACTION; YTTERBIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77951216469     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055015     Document Type: Article

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