Height-selective etching for regrowth of self-aligned contacts using MBE

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1984-1987

  Burek, G J ^a   Wistey, M A ^a   Singisetti, U ^a   Nelson, A ^b   Thibeault, B J ^a   Bank, S R ^c   Rodwell, M J W ^a   Gossard, A C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF ST THOMAS   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

A1. Etching; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Selective deposition; B2. Semiconducting III V materials; B3. Field effect transistors; B3. Heterojunction semiconductor devices

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ETCHING; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES;

A1. ETCHING; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; A3. SELECTIVE DEPOSITION; B2. SEMICONDUCTING III-V MATERIALS; B3. FIELD EFFECT TRANSISTORS; B3. HETEROJUNCTION SEMICONDUCTOR DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 63349108831     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.012     Document Type: Article

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