Strained silicon technology: Mobility enhancement and improved short channel effect performance by stress memorization technique on nFET devices

Journal of the Electrochemical Society

Volumn 157, Issue 5, 2010, Pages

  Lu, Chih Cheng ^a   Huang, Jiun Jia ^a   Luo, Wun Cheng ^a   Hou, Tuo Hung ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; CONTACT ETCH STOP LAYERS; DEVICE PERFORMANCE; ION MASS; MOBILITY ENHANCEMENT; ROLL-OFF CHARACTERISTICS; SHORT-CHANNEL EFFECT; SMT PROCESS; STRAIN ENGINEERING; STRAINED SILICON; STRESS MEMORIZATION TECHNIQUES;

DIELECTRIC FILMS; ELECTRON MOBILITY; METALLIC COMPOUNDS; MOS DEVICES; NITRIDES; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 77951161939     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3321948     Document Type: Article

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