Evaluation of the electrical properties, piezoresistivity and noise of poly-SiGe for MEMS-above-CMOS applications

Materials Research Society Symposium Proceedings

Volumn 1153, Issue , 2009, Pages 397-402

  Gonzalez, P ^a,b   Lenci, S ^a   Haspeslagh, L ^a   De Meyer, K ^a,b   Witvrouw, A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; HALL MOBILITY;

HEAVILY DOPED; PIEZORESISTIVITY; POLY-SIGE; SENSING LAYERS; STANDARD CMOS; TEMPERATURE COEFFICIENT OF RESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 77951117607     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1153-a19-04     Document Type: Conference Paper

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