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Volumn 16, Issue 10, 2009, Pages 353-364
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Simultaneous optimization of the material properties, uniformity and deposition rate of polycrystalline CVD and PECVD silicon-germanium layers for MEMS applications
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CMOS INTEGRATED CIRCUITS;
DEPOSITION RATES;
DEPOSITS;
GERMANIUM COMPOUNDS;
MEMS;
NANOCRYSTALLINE MATERIALS;
SILICON WAFERS;
THROUGHPUT;
GE CONCENTRATIONS;
MECHANICAL AND ELECTRICAL PROPERTIES;
MEMS APPLICATIONS;
MICRO ELECTROMECHANICAL SYSTEM (MEMS);
OPTIMIZED PROCESS;
POLY-CRYSTALLINE SILICON;
SILICON GERMANIUM;
SIMULTANEOUS OPTIMIZATION;
SI-GE ALLOYS;
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EID: 63149111379
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.2986794 Document Type: Conference Paper |
Times cited : (15)
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References (10)
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