Electrical properties and noise of poly SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS

Materials Research Society Symposium - Proceedings

Volumn 729, Issue , 2002, Pages 83-88

  Sedky, Sherif ^a,b  

^a IMEC   (Belgium)

^b CAIRO UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL GROWTH; CRYSTALLIZATION; DEGRADATION; DEPOSITION; ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; THERMAL EFFECTS;

ALUMINUM INTERCONNECTS; POLYSILICON GERMANIUM;

POLYSILICON;

EID: 0036924688     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-729-u3.2     Document Type: Conference Paper

References (11)

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