Growth, characterization and effect of substrate bias on ZnO prepared by reactive capillaritron ion beam sputtering deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 10, 2010, Pages 1581-1584

  Chao, Liang Chiun ^a   Lin, Syuan Jhuh ^a   Chang, Wan Chun ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Capillaritron; PVD; ZnO

Indexed keywords

ATOMIC PERCENTAGE; DEEP LEVEL EMISSION; GRAIN SIZE; GROWTH DIRECTIONS; ION BEAM SPUTTERING DEPOSITION; MATRIX; NEAR BAND EDGE EMISSIONS; OXYGEN ATOM; OXYGEN DEFICIENT; PARTIAL FLOW RATE; REACTIVE ION BEAM SPUTTERING; SECONDARY IONS; SI SUBSTRATES; SUBSTRATE BIAS; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMS; DEPOSITION; DRAINAGE; GRAIN GROWTH; ION BEAMS; ION BOMBARDMENT; ION SOURCES; IONS; LEAKAGE (FLUID); METALLIC FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING; TERNARY SYSTEMS; ZINC; ZINC OXIDE;

SUBSTRATES;

EID: 77951025911     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.03.012     Document Type: Article

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