ZnO thin films deposited by capillaritron ion beam sputtering deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 17, 2009, Pages 2874-2877

  Chao, Liang Chiun ^a   Tsai, Dong Yi ^a   Shih, Yu Ren ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Capillaritron; PVD; ZnO

Indexed keywords

ANNEALED FILMS; ANNEALING CONDITION; ATOMIC PERCENT; BEAM ENERGIES; CAPILLARITRON; CRYSTALLINE QUALITY; CRYSTALLOGRAPHIC ORIENTATIONS; DEEP LEVEL; DIFFRACTION PEAKS; ION BEAM SPUTTERING DEPOSITION; OXYGEN ATOM; PHOTOLUMINESCENCE PROPERTIES; PVD; VISIBLE EMISSIONS; ZNO; ZNO FILMS; ZNO MATRIX; ZNO THIN FILM;

ANNEALING; ATOMS; DEPOSITION; ION BEAMS; IONS; LEAKAGE (FLUID); METALLIC FILMS; OPTICAL FILMS; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; SPUTTERING; STOICHIOMETRY; THIN FILMS;

ZINC OXIDE;

EID: 68949105840     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.06.102     Document Type: Article

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