1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 121-124

  Takahashi, Hideki ^a   Kaneda, Mitsuru ^a   Minato, Tadaharu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DIODES; ELECTRIC POTENTIAL; ENERGY DISSIPATION; INSULATED GATE BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; SILICON WAFERS;

DIFFUSION ISOLATION; DIODE COUPLING; REVERSE BLOCKING; THIN WAFERS;

ELECTRIC CONVERTERS;

EID: 4944251659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.239841     Document Type: Conference Paper

References (3)

1. M. Takei, "600V-RB-IGBT With Reverse Blocking Capability", ISPSD 2001, pp413-416.
2. M. Takei, "The Reverse Blocking IGBT for Matrix Converter With Ultra Thin Wafer Technology", ISPSD 2003, pp156-159.
3. N. Tokuda, M. Kaneda, et. al. ISPSD 2004 candidate.