Reverse blocking IGBT for matrix converter with ultra-thin wafer technology

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 3, 2004, Pages 243-247

  Takei, M ^a   Naito, T ^a   Ueno, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; POWER CONVERTERS; SEMICONDUCTING BORON; SEMICONDUCTOR SWITCHES;

MATRIX CONVERTER; ULTRATHIN WAFER TECHNOLOGY;

MOSFET DEVICES;

EID: 3042563561     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040450     Document Type: Article

References (4)

1. Roy, M., Gonthier, L., Anceau, C.: 'The MBS (Mos Bidirectional Switch), a new MOS switch with reverse blocking voltage' Proc. European Conf. on Power Electronics and Applications, 1999, EPE 99-Lausanne, Switzerland
2. Takei, M., Harada, Y., and Ueno, K.: '600 V-IGBT with reverse blocking capability'. Proc. Int. Symp. on Power Semiconductor Devices, Osaka, Japan, 2001, pp. 413-416
3. Neilson, J.M., Kub, F.J., Hobart, K.D., Brandnmier, K., and Ancona, M.: 'Double-side IGBT phase leg architecture for reduced recovery current and turn-on loss'. Proc. Int. Symp. on Power Semiconductor Devices, Santa Fe, USA, 2002, pp. 141-144
4. Hakim, H., Sanchez, J.-L., Laur, J.-P., Austin, P., and Breil, M.: 'The concave junction: an attractive topology to design specific junction terminations'. Proc. Int. Symp. on Power Semiconductor Devices, Santa Fe, USA, 2002, pp. 193-196