Oscillation effects in IGET's related to negative capacitance phenomena

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 237-244

  Omura, Ichiro ^a,b   Fichtner, Wolfgang ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

^b ETH ZURICH   (Switzerland)

Author keywords

Insulated gate bipolar transistors; Oscillation

Indexed keywords

CAPACITANCE; CIRCUIT OSCILLATIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR);

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032715962     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737464     Document Type: Article

References (11)

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