Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Koo, Jamin ^a   Lee, Myeongwon ^a   Kang, Jeongmin ^a   Yoon, Changjoon ^a   Kim, Kwangeun ^a   Jeon, Youngin ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AU THIN FILMS; BACK-GATE; ELECTRICAL CHARACTERISTIC; GOLD IONS; N TYPE SILICON; P-TYPE; RAPID THERMAL ANNEALING PROCESS; SIMPLE TYPES;

DIFFUSION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; FILM THICKNESS; GOLD; IONS; NANOWIRES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

GOLD COATINGS;

EID: 77950935312     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045010     Document Type: Article

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