Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 50-54

  Felix, J A ^a   Xiong, H D ^a   Fleetwood, D M ^a   Gusev, E P ^b   Schrimpf, R D ^a   Sternberg, A L ^a   D'Emic, C ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

1 f noise; Border traps; Charge pumping; High ; Interface traps; Radiation effects

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; FREQUENCIES; INTERFACES (MATERIALS); IONIZING RADIATION; IRRADIATION; RADIATION EFFECTS; SILICA; SPURIOUS SIGNAL NOISE; SUBSTRATES;

1/F NOISE; BORDER TRAPS; CHARGE PUMPING; INTERFACE TRAPS;

MOSFET DEVICES;

EID: 1642587665     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.015     Document Type: Conference Paper

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