Growth of high-quality ITO thin films at low temperature by tuning the oxygen flow rate using the nano-cluster deposition (NCD) technique

Chemical Physics Letters

Volumn 490, Issue 4-6, 2010, Pages 234-237

  Pammi, S V N ^a   Chanda, Anupama ^a   Seong, Nak Jin ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CONTENT; CLUSTER DEPOSITION; HIGH QUALITY; HYDROXYL GROUPS; INDIUM TIN OXIDE THIN FILMS; ITO THIN FILMS; LOW TEMPERATURES; METAL ORGANIC PRECURSORS; OPTICAL TRANSPARENCY; ORGANIC CONTAMINATION; OXYGEN FLOW RATES; OXYGEN GAS FLOW;

CARBON FILMS; DECAY (ORGANIC); DEPOSITION; NANOCLUSTERS; ORGANIC CARBON; OXIDE FILMS; OXYGEN; THIN FILMS; TIN; TITANIUM COMPOUNDS;

ITO GLASS;

EID: 77950860270     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2010.03.035     Document Type: Article

References (23)

1. D.S. Ginley, MRS Bulletin Special Issue on Transparent Conducting Oxides 25 (2005).
2. Elam J.W., Baker D.A., Martinson A.B.F., Pellin M.J., and Hupp J.T. J. Phys. Chem. C 112 (2008) 1938
3. Tahar R.B.H., Ban T., Ohya Y., and Takahashi Y. J. Appl. Phys. 83 (1998) 2631
4. McMillan J., and Peterson E. J. Appl. Phys. 8 (1979) 5238
5. Kim Y.S., Park Y.C., Ansari S.G., Lee B.S., and Shin H.S. Thin Solid Films 426 (2003) 124
6. Ni J., et al. Inorg. Chem. 44 (2005) 6071
7. Ni J., et al. J. Am. Chem. Soc. 127 (2005) 5613
8. Wang A., Dai J., Cheng J., Chudzik M.P., Marks T.J., Chang R.P.H., and Kannewurf C.R. Appl. Phys. Lett. 73 (1998) 327
9. Pammi S.V.N., Seong N.J., and Yoon S.G. Scripta Mater. 61 (2009) 867
10. Frank G., and Kstlin H. Appl. Phys. A 27 (1982) 197
11. Banerjee R., Das D., Ray S., Batabyal A.K., and Barua A.K. Solar Energy Mater. 13 (1986) 11
12. Dekkers J.M., Rijnders G., and Blank D.H. Appl. Phys. Lett. 88 (2006) 151908
13. Sernelius B.E., Berggren K.F., Jin Z.C., Hamberg I., and Granqvist C.G. Phys. Rev. B 37 (1988) 10244
14. Yang Y., Wang L., Yan H., Jin S., Marks T.J., and Li S. Appl. Phys. Lett. 89 (2006) 051116
15. Kato D., Xu G., Iwasaki Y., Hirata Y., Kurita R., and Niwa O. Langmuir 23 (2007) 8400
16. Donley C., et al. Langmuir 18 (2002) 450
17. Purvis K.L., Lu G., Schwartz J., and Bernasek S.L. J. Am. Chem. Soc. 122 (2000) 1808
18. Yan C., Zharnikov M., Golzhauser A., and Grunze M. Langmuir 16 (2000) 6208
19. Bermudez V.M., Berry A.D., Kim H., and Pique A. Langmuir 22 (2006) 11113
20. Fan J.C.C., and Goodenough J.B. J. Appl. Phys. 48 (1977) 3524
21. Brumbach M., et al. Langmuir 23 (2007) 11089
22. T. Kugler, W.R. Salaneck, CR Acad. Sci. Paris, t.1 Ser. IV (2000) 409.
23. Ishida T., Kobayashi H., and Nakato Y. J. Appl. Phys. 73 (1993) 4344