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Volumn 49, Issue 2 Part 1, 2010, Pages

Effect of AI0.06Ga0.94N/GaN strained-layer superlattices cladding underlayer to InGaN-Based multi-quantum well grown on Si(111) substrate with AIN/GaN intermediate layer

(3) Shuhaimi, Bin Abu Bakar Ahmad a Watanabe, Arata a Egawa, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; EMISSION WAVELENGTH; GAUSSIAN FITTING; INTEGRATED INTENSITIES; INTERMEDIATE LAYERS; INTERNAL QUANTUM EFFICIENCY; MULTIQUANTUM WELLS; PEAK ENERGY; PHOTOLUMINESCENCE SPECTRUM; RECIPROCAL SPACE MAPPING; SI(111) SUBSTRATE; STRAINED-LAYER SUPERLATTICE; TEM; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; UNDERLAYERS;

ALUMINUM; GALLIUM ALLOYS; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77950830704 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.021002 Document Type: Article

Times cited : (11)

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