Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires

Journal of Physical Chemistry B

Volumn 109, Issue 46, 2005, Pages 22074-22077

  Cui, Jingbiao ^a   Gibson, Ursula J ^a  

^a DARTMOUTH COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; METALLIC DOPING; NANOWIRE; NUCLEATION DENSITY;

DOPING (ADDITIVES); ELECTROCHEMISTRY; GROWTH (MATERIALS); LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NUCLEATION; WIRE;

ZINC OXIDE;

EID: 28944454000     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp054160e     Document Type: Article

References (23)

1. Saito, N.; Haneda, H.; Sekiguchi, T.; Ohashi, N.; Sakaguchi, I.; Koumoto, K. Adv. Mater. 2002, 14, 418.
2. Lee, J. Y.; Choi, Y. S.; Kim, J. H.; Park, M. O.; Im, S. Thin Solid Films 2002, 403, 533.
3. Huang, M. H.; Mao, S.; Feick, H.; Yan, H. Q.; Wu, Y. Y.; Kind, H.; Weber, E.; Russo, R.; Yang, P. D. Science 2001, 292, 1897.
4. Rensmo, H.; Keis, K.; Lindstroem, H.; Soedergren, S.; Solbrand, A.; Hagfeldt, A.; Lindquist, S. E.; Wang, L. N.; Muhammed, M. J. Phys. Chem. B 1997, 101, 2598.
5. Lin, Y.; Zhang, Z.; Tang, Z.; Yuan, F.; Li, J. Adv. Mater. Opt. Electron. 1999, 9, 205.
6. Weissenrieder, K. S.; Mueller, J. Thin Solid Films 1997, 300, 30.
7. Koch, M. H.; Timbrell, P. Y.; Lamb, R. N. Semicond. Sci. Technol. 1995, 10, 1523.
8. Huang, M. H.; Wu, Y.; Feick, H.; Tran, N.; Weber, E.; Yang, P. Adv. Mater. 2001, 13, 113.
9. Choi, J. H.; Tabata, H.; Kawai, T. J. Cryst. Growth 2001, 226, 493.
10. Liu, S.; Wu, J. J. Mater. Res. Soc. Symp. Proc. 2002, 703, 241.
11. Wong, M. H.; Berenov, A.; Qi, X.; Kappers, M. J.; Barber, Z. H.; Uly, B.; Lockman, Z.; Ryan, M. P.; MacManus-Driscoll, J. L. Nanotechnology 2003, 14, 968.
12. Vayssieres, L.; Keis, K.; Lindquist, S.-E.; Hagfeldt, A. J. Phys. Chem. B 2001, 105, 3350.
13. Vayssieres, L.; Keis, K.; Hagfeldt, A.; Lindquist, S.-E. Chem. Mater. 2001, 13, 4395.
14. Vayssieres, L. Adv. Mater. 2003, 15, 464.
15. Greene, L. E.; Law, M.; Goldberger, J.; Kim, F.; Johnson, J. C.; Zhang, Y. F.; Saykally, R. J.; Yang, P. D. Angew. Chem., Int. Ed. 2003, 42, 3031.
16. Tian, Z. R.; Voigt, J. A.; Liu, J.; Mckenzie, B.; Mcdermott, M. J.; Rodriguez, M. A.; Konishi, H.; Xu, H. F. Nat. Mater. 2003, 2, 821.
17. Cui, J. B.; Daglian, C. P.; Gibson, U. J.; Puesche, R.; Geithner, P.; Ley, L. J. Appl. Phys. 2005, 97, 044315.
18. Ueda, K.; Tabata, H.; Kawai, T. Appl. Phys. Lett. 2001, 79, 988.
19. Pacholski, C.; Kornowsk, A.; Weller, H. Angew. Chem., Int. Ed. 2002, 41, 1188.
20. Wong, E. M.; Bonevich, J. E.; Searson, P. C. J. Phys. Chem. B 1998, 102, 7770.
21. Izaki, M.; Omi, T. J. Electrochem. Soc. 1996, 143, L53.
22. Izaki, M.; Omi, T. J. Electrochem. Soc. 1997, 144, 1949.
23. Barrera, E.; Pardave, M. P.; Batina, N.; Gonzalez, I. J. Electrochem. Soc. 2000, 147, 1787.