Formation of Si/SiC heterostructures on Si(100) by hot-filament-assisted CH3SiH3 gas jet chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2514-2515

  Ohtani, Ryota ^a   Ikoma, Yoshifumi ^a   Motooka, Teruaki ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

3C SiC; CH3SiH3; CVD; Molecular jet; Si

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SILICON; SILICON CARBIDE;

3C-SIC; CH3SIH3; HOT FILAMENT; MOLECULAR JET;

HETEROJUNCTIONS;

EID: 33645720246     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2514     Document Type: Article

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