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Applied Physics Letters

Volumn 95, Issue 19, 2009, Pages

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

(5) Schubert, Martin F a Dai, Qi b Xu, Jiuru b Kim, Jong Kyu c Schubert, E Fred b

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b Research Rensselaer Polytechnic Institute (United States)

c Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CONTACT REGIONS; FORWARD CURRENTS; OPTICAL EMISSIONS; PHOTO-LUMINESCENCE EXCITATION; PHOTOEXCITED CARRIERS; QUANTUM WELL; RECOMBINATION CHANNELS; SELF-BIAS;

CURRENT DENSITY; LIGHT; LIGHT EMITTING DIODES; PHOTOEXCITATION; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMISSION;

EID: 70449704492 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3258488 Document Type: Article

Times cited : (30)

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