Enhancement of carrier mobility in pentacene thin-film transistor on SiO 2 by controlling the initial film growth modes

Applied Surface Science

Volumn 255, Issue 9, 2009, Pages 5096-5099

  Qi, Qiong ^a   Yu, Aifang ^a   Jiang, Peng ^a   Jiang, Chao ^a  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

Initial growth mode; Organic thin film transistor; Pentacene; Surface treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; SUBSTRATES; SURFACE CLEANING; SURFACE TREATMENT; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

AMMONIA SOLUTION; FIELD-EFFECT MOBILITIES; GROWTH MODES; NUCLEATION AND GROWTH; ORGANIC THIN FILM TRANSISTORS; PENTACENE THIN FILM TRANSISTORS; PENTACENES; THREE-DIMENSIONAL ISLANDS;

FILM GROWTH;

EID: 60549110034     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.022     Document Type: Article

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