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Volumn 42, Issue 3, 2009, Pages
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Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : TTe ratio
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLIZATION KINETICS;
GERMANIUM;
GROWTH KINETICS;
MATERIALS;
PHASE CHANGE MEMORY;
PULSE CODE MODULATION;
SETTLING TANKS;
TELLURIUM COMPOUNDS;
TRANSIENTS;
CRYSTALLINE PHASE;
EUTECTIC COMPOSITIONS;
FAST TRANSITIONS;
GROWTH TIME;
LASER-INDUCED CRYSTALLIZATIONS;
NUCLEATION AND GROWTH KINETICS;
NUCLEATION KINETICS;
PHASE-CHANGE MEMORIES;
RESISTIVITY CHANGES;
SET OPERATIONS;
NUCLEATION;
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EID: 63649143924
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/3/035104 Document Type: Article |
Times cited : (18)
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References (17)
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