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Volumn 42, Issue 3, 2009, Pages

Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : TTe ratio

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION KINETICS; GERMANIUM; GROWTH KINETICS; MATERIALS; PHASE CHANGE MEMORY; PULSE CODE MODULATION; SETTLING TANKS; TELLURIUM COMPOUNDS; TRANSIENTS;

EID: 63649143924     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035104     Document Type: Article
Times cited : (18)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.