A study on the temperature dependence of characteristics of phase change memory devices

Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

  Lee, Suyoun ^a   Jeong, Doo Seok ^a   Jeong, Jeung Hyun ^a   Zhe, Wu ^a,b   Park, Young Wook ^a,c   Ahn, Hyung Woo ^a   Kim, Won Mok ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; BOTTOM ELECTRODES; CHALCOGENIDE GLASS; CRITICAL CONDUCTIVITY; DECREASE LINEARLY; ELECTRICAL CONDUCTION; RESET CURRENTS; SEMICONDUCTOR MODEL; SET TIME; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION; THRESHOLD SWITCHING; TRANSPORT MODELS;

GERMANIUM; SYSTEM THEORY; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; TRANSIENTS;

PHASE CHANGE MEMORY;

EID: 69949166529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211872     Document Type: Article

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