Demonstration of a reliable high speed phase-change memory using Ge-doped SbTe

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Lee, Suyoun ^a   Jeong, Jeung Hyun ^a   Wu, Zhe ^a,b   Park, Young Wook ^a,c   Kim, Won Mok ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE STATE; CRYSTALLIZATION TEMPERATURE; CYCLING ENDURANCE; DATA RETENTION; DEVICE CHARACTERISTICS; DEVICE RELIABILITY; DYNAMIC RESISTANCE; ELECTRICAL RESISTIVITY; IN-PHASE; MATERIAL PROPERTY; MELTING TEMPERATURES; OPERATION SPEED; PROGRAMMING CURRENTS;

CRYSTALLINE MATERIALS; ELECTRIC RESISTANCE; GERMANIUM; MELTING POINT; PULSE CODE MODULATION; SETTLING TANKS; SYSTEM THEORY;

PHASE CHANGE MEMORY;

EID: 65949119314     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3133252     Document Type: Article

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