Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

Current Applied Physics

Volumn 10, Issue 2, 2010, Pages 703-707

  Ahn, Jaehui ^a   Ko, Geunwoo ^a   Kim, Jihyun ^a   Mastro, Michael A ^b   Hite, Jennifer ^b   Eddy Jr , Charles R ^b  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Alignment; Electric field; GaN; Nanowire

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DEP FORCE; DIELECTROPHORETIC FORCES; DIRECT MANIPULATION; GAN; HIGH ASPECT RATIO; METAL CONTACTS; PULSED ELECTRIC FIELD;

ALIGNMENT; ASPECT RATIO; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; SEMICONDUCTING GALLIUM; WIRE;

DIELECTRIC DEVICES;

EID: 70350728393     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.09.004     Document Type: Article

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