High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2006, Pages 36-37

  Maikap, S ^a   Tzeng, P J ^a   Lee, L S ^a   Lee, H Y ^a   Wang, C C ^a   Tsai, P H ^b   Chang Liao, K S ^b   Chen, W J ^c   Liu, K C ^c   Jeng, P R ^a   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHARGE TRAPPING; FLASH MEMORY; HAFNIUM;

BLOCKING OXIDE; PROGRAM/ERASE SPEED;

OXIDE FILMS;

EID: 34250309223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2006.251055     Document Type: Conference Paper

References (3)

1. T. Sugizaki, et al., Symp. on VLSI Tech., p. 27, 2003.
2. Y. N. Tan, et al., IEDM Tech. Dig, p. 889, 2004.
3. C. H. Lee, et. al., App. Phys. Lett. Vol. 86, p.152908, 2005.