Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2002-2005

  Chang, Man ^a   Hasan, Musarrat ^a   Jung, Seungjae ^a   Park, Hokyung ^a   Jo, Minseok ^a   Choi, Hyejung ^a   Kwon, Moonjae ^a   Hwang, Hyunsang ^a   Choi, Sangmoo ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Blocking efficiency; High pressure annealing; MANOS; Wet vapor annealing

Indexed keywords

ANNEALING; CURRENT DENSITY; DATA STORAGE EQUIPMENT; FLASH MEMORY; LEAKAGE CURRENTS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; THIN FILMS;

BLOCKING EFFICIENCY; HIGH-PRESSURE ANNEALING; WET VAPOR ANNEALING;

NONVOLATILE STORAGE;

EID: 34248635428     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.034     Document Type: Article

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