HfO2-high-k dielectric for nanoelectronics

ECS Transactions

Volumn 25, Issue 8 PART 2, 2009, Pages 875-880

  Smirnova, T P ^a   Kuznetsov, F A ^a   Yakovkina, L V ^a   Kaichev, V V ^b   Kosyakov, V I ^a   Lebedev, M S ^a   Kichai, V N ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; FILM DEPOSITION; HAFNIUM SILICATES; HIGH-K DIELECTRIC; INTERFACE LAYER; IR-SPECTROSCOPY; NULL ELLIPSOMETRY; TEM; XPS;

DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON; SPACECRAFT INSTRUMENTS;

CHEMICAL VAPOR DEPOSITION;

EID: 76549091892     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3207680     Document Type: Conference Paper

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