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Volumn 96, Issue 12, 2010, Pages

Valence electron energy-loss spectroscopy of ultrathin SrTiO3 films grown on silicon (100) single crystal

(10) Su, Dong a Yang, Bo b Jiang, Nan b Sawicki, M c Broadbridge, C c Couillard, M d Reiner, J W e Walker, F J e Ahn, C H e Zhu, Yimei a

a BROOKHAVEN NATIONAL LABORATORY (United States)

b ARIZONA STATE UNIVERSITY (United States)

c SOUTHERN CONNECTICUT STATE UNIVERSITY (United States)

d MCMASTER UNIVERSITY (Canada)

e Yale University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; CRYSTALLINE SI; FUNCTION THEORY; PLASMON EXCITATIONS; RED SHIFT; SI LAYER; SILICON (100); SRTIO; ULTRA-THIN; VALENCE ELECTRON ENERGY-LOSS SPECTROSCOPIES;

AMORPHOUS SILICON; DISSOCIATION; ELECTRON SCATTERING; ELECTRONS; PLASMONS; SILICON WAFERS; SINGLE CRYSTALS; STRONTIUM ALLOYS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77950332154 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3364144 Document Type: Article

Times cited : (8)

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