UV-Induced grafting of alkenes to silicon surfaces: Photoemission versus excitons

Journal of the American Chemical Society

Volumn 132, Issue 12, 2010, Pages 4048-4049

  Wang, Xiaoyu ^a   Ruther, Rose E ^a   Streifer, Jeremy A ^a   Hamers, Robert J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; INITIATION PROCESS; PHOTOCARRIER LIFETIMES; RECOMBINATION PROCESS; SILICON SURFACES; TERMINAL GROUPS; ULTRA-VIOLET LIGHT;

EXCITONS; GRAFTING (CHEMICAL); PHOTOEMISSION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ULTRAVIOLET RADIATION;

OLEFINS;

ALKENE; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRON; EXCITON; ILLUMINATION; PHOTOEMISSION; PHOTON; PHYSICAL PARAMETERS; SAMPLE; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950255712     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja910498z     Document Type: Article

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