Suppression of electron mobility degradation in (100)-oriented double-gate ultrathin body nMOSFETs

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 284-286

  Shimizu, Ken ^a   Saraya, Takuya ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Double gate (DG); Electron mobility; MOSFET; SOI

Indexed keywords

DOUBLE GATE; DOUBLE GATE (DG); MOBILITY DEGRADATION; MOS-FET; NMOSFETS; QUANTUM CONFINEMENT EFFECTS; SINGLE GATES; SOI THICKNESS; SUPPRESSION MECHANISM; THIN SOI; ULTRATHIN BODY; ULTRATHIN-BODY MOSFETS;

DEGRADATION; ELECTRONS; GALERKIN METHODS; MOSFET DEVICES;

ELECTRON MOBILITY;

EID: 77950069754     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2041179     Document Type: Article

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