Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1230-1237

  Traversa, M ^a   Lovergine, N ^a   Prete, P ^b   Yoshino, K ^c   Di Luccio, T ^d   Scalia, G ^d   Pentlmalli, M ^d   Tapfer, L ^d   Morales, P ^e   Mancini, A M ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b Ist Microelettronica/i Microsistemi   (Italy)

^c UNIVERSITY OF MIYAZAKI   (Japan)

^d Centro Ricerche Brindisi   (Italy)

^e ENEA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DIFFUSION; ELECTRON BEAMS; ENERGY GAP; EXCITONS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHONONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

BAND-EDGE (BE) EMISSIONS; DONOR-ACCEPTOR PAIR (DAP) BANDS; ELECTRON BEAM ENERGY; SURFACE KINETICS;

ZINC COMPOUNDS;

EID: 3242720717     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1762711     Document Type: Article

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