Structural deformation reduction of ZnTe heteroepitaxial layers grown on GaAs (0 0 1) substrates by using low-temperature buffer

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 22-25

  Lee, Woong ^a   Jung, Myunghoon ^a   Jung, Mina ^a   Lee, Hongchan ^a   Lee, Sangtae ^a   Park, Seunghwan ^b   Yao, Takafumi ^b   Song, Joonsuk ^c   Ko, Hangju ^d   Chang, Jiho ^a  

^a KMU   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

^c NeosemiTech Corporation   (South Korea)

^d Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

A1. Reciprocal space mapping; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. ZnTe

Indexed keywords

CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; MAPPING; MOLECULAR BEAM EPITAXY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC ALLOYS;

RECIPROCAL SPACE MAPPING (RSM); STRUCTURAL DEFORMATION; STRUCTURAL QUALITY;

EPITAXIAL GROWTH;

EID: 34247877633     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.042     Document Type: Article

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