Structural and optical properties of high-quality ZnTe homoepitaxial layers

Applied Physics Letters

Volumn 77, Issue 9, 2000, Pages 1256-1258

  Chang, J H ^a   Cho, M W ^a   Wang, H M ^a   Wenisch, H ^a   Hanada, T ^a   Yao, T ^a   Sato, K ^b   Oda, O ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001403976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1290155     Document Type: Article

References (13)

1. Y. Rajakarunanayake, B. H. Cole, J. O. Mccaldin, D. H. Chow, J. R. Soderstrom, and T. C. McGill, Appl. Phys. Lett. 55, 1217 (1989).
2. J. Petruzzello, D. J. Olego, X. Chu, and J. P. Faurie, J. Appl. Phys. 63, 1783 (1988).
3. Y. Zhang, B. J. Skromme, and F. S. Turco-Sandroff, Phys. Rev. B 46, 3872 (1992).
4. G. Kudlek, N. Presser, J. Gutowski, K. Hingerl, E. Abram, A. Pesek, H. Pauli, and H. Sitter, J. Cryst. Growth 117, 290 (1992).
5. S. Nam, J. Rhee, B. O, K. Lee, Y. Choi, G. Jeon, and C. Lee, J. Cryst. Growth 180, 47 (1997).
6. Y. Seki, K. Sato, and O. Oda, J. Cryst. Growth 171, 32 (1997).
7. I. K. Robinson, Phys. Rev. B 33, 3830 (1986).
8. R. Bhargava, Properties of Wide-band-Gap II-VI Semiconductors (INSPEC, 1997), p. 141.
9. A. Naumov, K. Wolf, T. Reisinger, H. Stanzi, and W. Gebhart, J. Appl. Phys. 73, 2581 (1993).
10. H. Venghaus and P. J. Dean, Phys. Rev. B 21, 1596 (1980).
11. J. L. Pautrat, J. M. Francou, N. Magnea, E. Molva, and K. Saminadayar, J. Cryst. Growth 72, 194 (1985).
12. K. Saminadayar, N. Magnea, J. L. Pautrat, and B. Pajot, Phys. Status Solidi B 106, 215 (1981).
13. J. R. Haynes, Phys. Rev. Lett. 4, 361 (1960).