Influence of the substrate lattice structure on the formation of quantum well states in thin in and Pb films on silicon

Journal of Physics Condensed Matter

Volumn 22, Issue 13, 2010, Pages

  Dil, J H ^a,c   Hulsen B ^a   Kampen, T U ^a   Kratzer, P ^b   Horn, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c UNIVERSITY OF ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED PHOTOEMISSION; FACE-CENTRED CUBIC; GROWTH ORIENTATIONS; PB FILM; QUANTUM-WELL STATE; SI (1 1 1); SI(1 0 0); SUBSTRATE LATTICE; TETRAGONAL LATTICES; THEORETICAL PREDICTION; THREE MODELS;

DENSITY FUNCTIONAL THEORY; ELECTRON DIFFRACTION; INDIUM; LEAD; SILICON;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77949703843     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/13/135008     Document Type: Article

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