Anisotropic metal-insulator transition in epitaxial thin films

Physical Review Letters

Volumn 92, Issue 22, 2004, Pages

  Altfeder, I B ^a,b   Liang, X ^b,c   Yamada, T ^d   Chen, D M ^b   Narayanamurti, V ^a  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^d NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COULOMB BLOCKADE; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC EXCITATION; EPITAXIAL GROWTH; FERMI SURFACE; GROUND STATE; HIGH ENERGY ELECTRON DIFFRACTION; INDIUM; LEAD; METAL INSULATOR TRANSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ULTRAHIGH VACUUM;

CORRELATION GAPS; ION SPUTTERING; LOCALIZED ELECTRONIC STATES; QUANTUM ENHANCEMENT;

THIN FILMS;

EID: 3042707156     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.226404     Document Type: Article

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