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Volumn 298, Issue SPEC. ISS, 2007, Pages 808-810

Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Metals; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL; OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 33846431623     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.100     Document Type: Article
Times cited : (9)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.