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Volumn 298, Issue SPEC. ISS, 2007, Pages 808-810
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Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry
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Author keywords
A3. Metalorganic chemical vapor deposition; B1. Gallium compounds; B1. Metals; B1. Nitrides; B2. Semiconducting III V materials
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Indexed keywords
ANNEALING;
DIFFUSION;
ELECTRIC RESISTANCE;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NICKEL;
OXIDATION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
ANNEALING TIME;
CONTACT RESISTANCE;
GAN;
OHMIC CONTACTS;
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EID: 33846431623
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.100 Document Type: Article |
Times cited : (9)
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References (16)
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